DTD123TSTP
TRANS PREBIAS NPN 40V 0.5A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTD123TSTP is an NPN pre-biased bipolar transistor. This through-hole component features a collector-emitter breakdown voltage of 40V and a maximum collector current of 500mA. With a transition frequency of 200 MHz and a power dissipation of 300mW, it offers a minimum DC current gain (hFE) of 100 at 50mA and 5V. The integrated base resistor (R1) is 2.2 kOhms, and the saturation voltage (Vce Sat) is a maximum of 300mV at 2.5mA and 50mA. The device is supplied in a Tape & Reel (TR) package, utilizing the SPT supplier device package. This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
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