DTD122JKT146
TRANS PREBIAS NPN 50V 0.5A SMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
The Rohm Semiconductor DTD122JKT146 is an NPN pre-biased bipolar junction transistor. This SMT3 packaged component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. Featuring integrated base resistors of 220 Ohms (R1) and 4.7 kOhms (R2), it simplifies circuit design by eliminating external biasing components. The transistor exhibits a minimum DC current gain (hFE) of 47 at 50mA collector current and 5V Vce, with a transition frequency of 200 MHz. Its maximum power dissipation is 200mW. This device is suitable for applications in consumer electronics, industrial automation, and telecommunications, where space and component count are critical. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 47 @ 50mA, 5V |
| Supplier Device Package | SMT3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 220 Ohms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
Request a Quote
Clients Also Buy
DTA143ECAT116
TRANS PREBIAS PNP 50V 0.1A SST3
DTC015TUBTL
TRANS PREBIAS NPN 50V UMT3F
DTC144EU3HZGT106
TRANS PREBIAS NPN 50V 0.1A UMT3
