DTD114ESTP
TRANS PREBIAS NPN 50V 0.5A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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The Rohm Semiconductor DTD114ESTP is an NPN pre-biased bipolar transistor. This through-hole component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It features a transition frequency of 200 MHz and a maximum power dissipation of 300mW. The internal base resistors are specified as R1 (base-emitter) at 10 kOhms and R2 (collector-base) at 10 kOhms. The device exhibits a minimum DC current gain (hFE) of 56 at 50mA and 5V, with a saturation voltage (Vce Sat) of 300mV at 2.5mA collector current and 50mA base current. The collector cutoff current is a maximum of 500nA. This component is commonly utilized in industrial and consumer electronics applications requiring simplified circuit designs and reduced component counts. The DTD114ESTP is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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