DTD113ZSTP
TRANS PREBIAS NPN 50V 0.5A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor's DTD113ZSTP is an NPN pre-biased bipolar transistor featuring integrated base-emitter resistors. This device offers a collector-emitter breakdown voltage of 50V and a continuous collector current of up to 500mA. The transistor exhibits a transition frequency of 200MHz and a maximum power dissipation of 300mW. It is supplied in a Tape & Reel (TR) package with the Supplier Device Package (SPT) designation, utilizing a through-hole mounting type. The internal base resistor (R1) is 1 kOhms and the base-emitter resistor (R2) is 10 kOhms, facilitating simplified circuit design. This component is commonly utilized in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased + Diode |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 50mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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