DTD113EKFRAT146
TRANS PREBIAS NPN 50V 0.5A SMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
This Rohm Semiconductor NPN Pre-Biased Transistor, part number DTD113EKFRAT146, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. Featuring integrated base resistors of 1kO (R1) and 1kO (R2), this device simplifies circuit design. It achieves a transition frequency of 200MHz with a maximum power dissipation of 200mW. The SMT3 package (TO-236-3, SC-59, SOT-23-3) is supplied on tape and reel for automated assembly. This AEC-Q101 qualified component is suitable for automotive applications, providing a minimum DC current gain (hFE) of 33 at 50mA and 5V. Collector cutoff current is a maximum of 500nA, and Vce saturation is 300mV at 2.5mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
| Supplier Device Package | SMT3 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
DTC115EUBTL
TRANS PREBIAS NPN 50V UMT3F
DTC123JCAHZGT116
TRANS PREBIAS NPN 50V 0.1A SST3
DTD114GCHZGT116
TRANS PREBIAS NPN 50V 0.5A SST3
