DTC363EUT106
TRANS PREBIAS NPN 20V 0.6A UMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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The Rohm Semiconductor DTC363EUT106 is an NPN pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 20V and a maximum collector current (Ic) of 600mA. It offers a high transition frequency of 200MHz and a maximum power dissipation of 200mW. The internal base resistors are R1 at 6.8 kOhms and R2 at 6.8 kOhms, providing a minimum DC current gain (hFE) of 70 at 50mA and 5V. The transistor is housed in an UMT3 package, specifically SC-70/SOT-323, for surface mounting and supplied on tape and reel. This device is suitable for applications in consumer electronics and industrial control systems requiring simplified switching and amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Supplier Device Package | UMT3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 6.8 kOhms |
| Resistor - Emitter Base (R2) | 6.8 kOhms |
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