DTC314TUT106
TRANS PREBIAS NPN 15V 0.6A UMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor NPN Pre-Biased Transistor, DTC314TUT106, in an UMT3 package. This device features a 15V collector-emitter breakdown voltage and a maximum collector current of 600mA. The transition frequency is 200MHz, with a maximum power dissipation of 200mW. Key specifications include a minimum DC current gain (hFE) of 100 at 50mA, 5V, and a base resistor (R1) of 10 kOhms. Collector cutoff current (ICBO) is a maximum of 500nA. Saturation voltage (Vce Sat) is 80mV at 2.5mA, 50mA. This transistor is suitable for surface mount applications and is supplied in a Tape & Reel (TR) package. It is commonly utilized in industrial controls, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
| Supplier Device Package | UMT3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
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