DTC144GKAT146
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor's DTC144G series NPN pre-biased transistor, part number DTC144GKAT146, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. This SMT3 packaged device features a 250MHz transition frequency and a maximum power dissipation of 200mW. The integrated 47kO emitter-base resistor (R2) simplifies circuit design by eliminating the need for an external resistor. Key parameters include a minimum DC current gain (hFE) of 68 at 5mA/5V and a saturation voltage (Vce Sat) of 300mV at 500µA/10mA. The collector cutoff current (ICBO) is a maximum of 500nA. This component is suitable for applications in consumer electronics and industrial control systems. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: DTC144GRoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | SMT3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 47 kOhms |
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