DTC143ZSATP
TRANS PREBIAS NPN 50V 0.1A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor NPN Pre-Biased Transistor, part number DTC143ZSATP, is a single bipolar junction transistor designed for applications requiring simplified circuitry. This device features internal base resistors, R1 at 4.7 kOhms and R2 at 47 kOhms, enabling direct drive from logic-level signals. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a transition frequency of 250 MHz and a power dissipation of 300 mW, the DTC143ZSATP is suitable for general-purpose switching and amplification in industrial control, automotive electronics, and consumer devices. The unit is supplied in a Through Hole SPT package, delivered in Tape & Box (TB) packaging. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 10mA, 5V, and a Vce(sat) of 300mV at 250µA, 5mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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