DTC143ESATP
TRANS PREBIAS NPN 50V 0.1A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTC143ESATP is an NPN pre-biased bipolar transistor designed for efficient digital signal switching. This device features an integrated base resistor (R1 = 4.7 kOhms) and base-emitter resistor (R2 = 4.7 kOhms), simplifying circuit design and reducing component count in applications such as consumer electronics and industrial automation. The transistor offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, with a transition frequency of 250 MHz. Its maximum power dissipation is 300 mW. The DTC143ESATP is supplied in an SPT package, suitable for through-hole mounting, and is available in Tape & Box packaging. Saturation voltage (Vce(sat)) is specified at a maximum of 300mV at 500µA base current and 10mA collector current, with a minimum DC current gain (hFE) of 30 at 10mA collector current and 5V Vce.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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