DTC124GKAT146
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor NPN Pre-Biased Transistor, DTC124GKAT146. This SMT3 packaged device offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. Featuring an integrated 22 kOhm emitter-base resistor, this transistor simplifies circuit design by eliminating external bias components. The DTC124GKAT146 provides a minimum DC current gain (hFE) of 56 at 5mA, 5V, and a transition frequency of 250 MHz. With a maximum power dissipation of 200mW and a collector cutoff current of 500nA (ICBO), it is suitable for applications requiring precise switching and amplification. This component is commonly utilized in consumer electronics, industrial automation, and telecommunications equipment. Supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Supplier Device Package | SMT3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 22 kOhms |
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