DTC124ESATP
TRANS PREBIAS NPN 50V 0.03A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor NPN Pre-Biased Transistor, DTC124ESATP. This bipolar junction transistor features an NPN configuration with integrated base resistors, simplifying circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 30mA. The transition frequency is rated at 250MHz, with a maximum power dissipation of 300mW. The internal base resistors are specified as 22 kOhms (R1) and 22 kOhms (R2). Saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current. Minimum DC current gain (hFE) is 56 at 5mA collector current and 5V collector-emitter voltage. The device exhibits a collector cutoff current (Ic) of 500nA maximum. Supplied in a through-hole mounting package, SPT, and available in Tape & Box (TB) packaging. Commonly utilized in industrial and consumer electronics for switching and amplification applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 30 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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