DTC123YEBHZGTL
TRANS PREBIAS NPN 50V 0.1A EMT3FManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Rohm Semiconductor NPN - Pre-Biased Bipolar Transistor, DTC123YEBHZGTL. This AEC-Q101 qualified component features a 50V collector-emitter breakdown voltage and a 100mA maximum collector current. With a transition frequency of 250 MHz and a power dissipation of 150mW, it incorporates internal base resistors of 2.2 kOhms (R1) and 10 kOhms (R2) for simplified circuit design. The device exhibits a minimum DC current gain (hFE) of 33 at 10mA collector current and 5V collector-emitter voltage, with a saturation voltage (Vce Sat) of 300mV at 500µA base current and 10mA collector current. The DTC123YEBHZGTL is packaged in an EMT3F (SOT-416FL) surface mount configuration, supplied on tape and reel. This component is suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 10mA, 5V |
| Supplier Device Package | EMT3F (SOT-416FL) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Qualification | AEC-Q101 |
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