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DTC123YEBHZGTL

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DTC123YEBHZGTL

TRANS PREBIAS NPN 50V 0.1A EMT3F

Manufacturer: Rohm Semiconductor

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor NPN - Pre-Biased Bipolar Transistor, DTC123YEBHZGTL. This AEC-Q101 qualified component features a 50V collector-emitter breakdown voltage and a 100mA maximum collector current. With a transition frequency of 250 MHz and a power dissipation of 150mW, it incorporates internal base resistors of 2.2 kOhms (R1) and 10 kOhms (R2) for simplified circuit design. The device exhibits a minimum DC current gain (hFE) of 33 at 10mA collector current and 5V collector-emitter voltage, with a saturation voltage (Vce Sat) of 300mV at 500µA base current and 10mA collector current. The DTC123YEBHZGTL is packaged in an EMT3F (SOT-416FL) surface mount configuration, supplied on tape and reel. This component is suitable for automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-89, SOT-490
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce33 @ 10mA, 5V
Supplier Device PackageEMT3F (SOT-416FL)
GradeAutomotive
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW
Frequency - Transition250 MHz
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)10 kOhms
QualificationAEC-Q101

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