DTC123JSATP
TRANS PREBIAS NPN 50V 0.1A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor NPN Pre-Biased Transistor, part number DTC123JSATP. This through-hole component features 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a transition frequency of 250MHz and a power dissipation of 300mW. The device incorporates internal base resistors, R1 at 2.2 kOhms and R2 at 47 kOhms, simplifying circuit design. Minimum DC current gain (hFE) is 80 at 10mA collector current and 5V Vce. Saturation voltage (Vce Sat) is a maximum of 300mV at 250µA base current and 5mA collector current. Collector cutoff current is a maximum of 500nA. This transistor is supplied in Tape & Box (TB) packaging with an SPT package type. Applications include industrial automation, consumer electronics, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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