DTC115GUAT106
TRANS PREBIAS NPN 50V 0.1A UMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor NPN Pre-Biased Transistor, DTC115GUAT106. This surface mount device features a 50V collector-emitter breakdown voltage and a 100mA maximum collector current. The transition frequency is 250MHz, with a maximum power dissipation of 200mW. The internal emitter base resistor (R2) is 100 kOhms. It exhibits a minimum DC current gain (hFE) of 82 at 5mA collector current and 5V collector-emitter voltage. The saturation voltage at 250µA base current and 5mA collector current is a maximum of 300mV. This component is suitable for applications in consumer electronics and industrial automation. Packaged in UMT3 (SC-70, SOT-323) and supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V |
| Supplier Device Package | UMT3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 100 kOhms |
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