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DTC115GU3HZGT106

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DTC115GU3HZGT106

TRANS PREBIAS NPN 50V 0.1A UMT3

Manufacturer: Rohm Semiconductor

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor presents the DTC115GU3HZGT106, an NPN pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a transition frequency of 250 MHz and a maximum power dissipation of 200 mW, it is suitable for applications requiring compact signal switching. The integrated base-emitter resistor (R2) is 100 kOhms, contributing to a typical DC current gain (hFE) of 82. The saturation voltage at 500 µA base current and 10 mA collector current is 300 mV. Designed for surface mounting, it is provided in an UMT3 package, also known as SC-70 or SOT-323. This device meets AEC-Q101 qualification standards, making it appropriate for automotive applications. It is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 5mA, 5V
Supplier Device PackageUMT3
GradeAutomotive
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition250 MHz
Resistor - Emitter Base (R2)100 kOhms
QualificationAEC-Q101

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