DTC115GU3HZGT106
TRANS PREBIAS NPN 50V 0.1A UMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor presents the DTC115GU3HZGT106, an NPN pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a transition frequency of 250 MHz and a maximum power dissipation of 200 mW, it is suitable for applications requiring compact signal switching. The integrated base-emitter resistor (R2) is 100 kOhms, contributing to a typical DC current gain (hFE) of 82. The saturation voltage at 500 µA base current and 10 mA collector current is 300 mV. Designed for surface mounting, it is provided in an UMT3 package, also known as SC-70 or SOT-323. This device meets AEC-Q101 qualification standards, making it appropriate for automotive applications. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V |
| Supplier Device Package | UMT3 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Qualification | AEC-Q101 |