DTC115GKAT146
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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The Rohm Semiconductor DTC115G is an NPN pre-biased bipolar transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. This component features an internal base resistor (R1) of 100 kOhms and a transition frequency of 250 MHz. Designed for surface mounting in the SMT3 package (TO-236-3, SC-59, SOT-23-3), it offers a maximum power dissipation of 200 mW. The DTC115G series is commonly employed in digital logic circuits, switching applications, and driver circuits across various industries, including consumer electronics and industrial automation. It is supplied in Tape & Reel packaging.
Additional Information
Series: DTC115GRoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V |
| Supplier Device Package | SMT3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 100 kOhms |
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