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DTC115EU3HZGT106

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DTC115EU3HZGT106

TRANS PREBIAS NPN 50V 0.1A UMT3

Manufacturer: Rohm Semiconductor

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor NPN Pre-Biased Transistor, DTC115EU3HZGT106, is designed for automotive applications and meets AEC-Q101 qualification. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The built-in resistors, R1 at 100 kOhms and R2 at 100 kOhms, facilitate simplified circuit design. With a transition frequency of 250 MHz and a power dissipation of 200 mW, this transistor is suitable for high-frequency switching and signal amplification. The UMT3 package offers a compact surface mount solution. Additional specifications include a minimum DC current gain of 82 at 5mA, 5V, and a collector cutoff current of 500nA. This component is commonly found in automotive control systems and various electronic signal conditioning circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 5mA, 5V
Supplier Device PackageUMT3
GradeAutomotive
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition250 MHz
Resistor - Base (R1)100 kOhms
Resistor - Emitter Base (R2)100 kOhms
QualificationAEC-Q101

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