DTC115EU3HZGT106
TRANS PREBIAS NPN 50V 0.1A UMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor NPN Pre-Biased Transistor, DTC115EU3HZGT106, is designed for automotive applications and meets AEC-Q101 qualification. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The built-in resistors, R1 at 100 kOhms and R2 at 100 kOhms, facilitate simplified circuit design. With a transition frequency of 250 MHz and a power dissipation of 200 mW, this transistor is suitable for high-frequency switching and signal amplification. The UMT3 package offers a compact surface mount solution. Additional specifications include a minimum DC current gain of 82 at 5mA, 5V, and a collector cutoff current of 500nA. This component is commonly found in automotive control systems and various electronic signal conditioning circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V |
| Supplier Device Package | UMT3 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Qualification | AEC-Q101 |
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