DTC114WSATP
TRANS PREBIAS NPN 50V 0.1A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTC114WSATP is an NPN pre-biased bipolar junction transistor. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The DTC114WSATP offers a minimum DC current gain (hFE) of 24 at 10mA and 5V, with a transition frequency of 250 MHz. It includes integrated base resistors of 10 kOhms (R1) and 4.7 kOhms (R2). The saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current. With a maximum power dissipation of 300mW, this transistor is housed in an SPT package with formed leads, suitable for through-hole mounting. The DTC114WSATP is supplied in Tape & Box (TB) packaging. This device is found in applications such as digital logic circuits and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 24 @ 10mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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