DTC114GKAT146
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTC114GKAT146, an NPN pre-biased bipolar transistor, features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. This device is designed for surface mount applications, utilizing the SMT3 package (TO-236-3, SC-59, SOT-23-3). It offers a transition frequency of 250MHz and a maximum power dissipation of 200mW. The internal emitter-base resistor (R2) is rated at 10 kOhms. Key parameters include a minimum DC current gain (hFE) of 30 at 5mA, 5V, and a saturation voltage (Vce Sat) of 300mV at 500µA, 10mA. The collector cutoff current (ICBO) is a maximum of 500nA. This component is commonly employed in digital logic circuits and general-purpose amplification within the consumer electronics and industrial automation sectors. Supplied in Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SMT3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 10 kOhms |
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