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DTC114GKAT146

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DTC114GKAT146

TRANS PREBIAS NPN 50V 0.1A SMT3

Manufacturer: Rohm Semiconductor

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor DTC114GKAT146, an NPN pre-biased bipolar transistor, features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. This device is designed for surface mount applications, utilizing the SMT3 package (TO-236-3, SC-59, SOT-23-3). It offers a transition frequency of 250MHz and a maximum power dissipation of 200mW. The internal emitter-base resistor (R2) is rated at 10 kOhms. Key parameters include a minimum DC current gain (hFE) of 30 at 5mA, 5V, and a saturation voltage (Vce Sat) of 300mV at 500µA, 10mA. The collector cutoff current (ICBO) is a maximum of 500nA. This component is commonly employed in digital logic circuits and general-purpose amplification within the consumer electronics and industrial automation sectors. Supplied in Tape & Reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Supplier Device PackageSMT3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition250 MHz
Resistor - Emitter Base (R2)10 kOhms

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