DTC114ESATP
TRANS PREBIAS NPN 50V 0.05A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor NPN Pre-Biased Transistor, DTC114ESATP. This through-hole device features a 50V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a transition frequency of 250MHz, it offers a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V collector-emitter voltage. The internal base resistors are R1 at 10kOhms and R2 at 10kOhms. The device dissipates a maximum power of 300mW and has a Vce saturation of 300mV at 500µA base current and 10mA collector current. The collector cutoff current is a maximum of 500nA. This component is supplied in SPT packaging on tape and box. Applications include digital logic circuits and switching applications in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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