DTC114EBT2L
TRANS PREBIAS NPN 50V 0.1A VMN3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTC114EBT2L, an NPN pre-biased bipolar transistor, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. This component features a transition frequency of 250MHz and a maximum power dissipation of 150mW. Designed with integrated base resistors (R1 = 10 kOhms, R2 = 10 kOhms), it simplifies circuit design. The DTC114EBT2L is supplied in a VMN3 package (SOT-923F) and is available on tape and reel. Its low leakage current (500nA max) and saturation voltage (300mV @ 500µA, 10mA) make it suitable for applications in consumer electronics and industrial control systems. The minimum DC current gain (hFE) is 30 at 5mA, 5V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-923F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | VMN3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |