DTB743ZMT2L
TRANS PREBIAS PNP 30V 0.2A VMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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The Rohm Semiconductor DTB743ZMT2L is a PNP Pre-Biased Bipolar Transistor. This component features a 30V collector-emitter breakdown voltage and a maximum collector current of 200mA. The transition frequency is rated at 260MHz. It includes integrated base resistors of 4.7 kOhms (R1) and 47 kOhms (R2) for simplified circuit design. The transistor offers a minimum DC current gain (hFE) of 140 at 100mA and 2V. With a maximum power dissipation of 150mW, it is housed in a VMT3 (SOT-723) surface mount package and supplied on tape and reel. This device is suitable for applications in consumer electronics and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Supplier Device Package | VMT3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 150 mW |
| Frequency - Transition | 260 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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