DTB743XMT2L
TRANS PREBIAS PNP 30V 0.2A VMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor's DTB743XMT2L is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications within the VMT3 package, also known as SOT-723. This component features a collector-emitter breakdown voltage of 30V and a maximum collector current of 200mA. The integrated base resistors, R1 (4.7 kOhms) and R2 (10 kOhms), simplify circuit design by eliminating the need for external biasing components. With a transition frequency of 260 MHz and a maximum power dissipation of 150 mW, the DTB743XMT2L is suitable for applications requiring stable switching and amplification, including industrial automation and consumer electronics. Its typical DC current gain (hFE) is 140 at 100mA and 2V. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 53 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Supplier Device Package | VMT3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 150 mW |
| Frequency - Transition | 260 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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