DTB743EMT2L
TRANS PREBIAS PNP 30V 0.2A VMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTB743EMT2L is a PNP, pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 30 V and a maximum collector current of 200 mA. It offers a transition frequency of 260 MHz and a maximum power dissipation of 150 mW. The internal base resistor (R1) is 4.7 kOhms and the emitter base resistor (R2) is 4.7 kOhms, simplifying circuit design. The transistor exhibits a minimum DC current gain (hFE) of 115 at 100 mA and 2 V. Saturation voltage is specified at 300 mV maximum @ 2.5 mA base current and 50 mA collector current. The VMT3 package, consistent with SOT-723, is supplied on tape and reel. This device is commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 115 @ 100mA, 2V |
| Supplier Device Package | VMT3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 150 mW |
| Frequency - Transition | 260 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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