DTB723YMT2L
TRANS PREBIAS PNP 30V 0.2A VMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTB723YMT2L is a PNP, pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a VCE breakdown voltage of 30V and a maximum collector current (Ic) of 200mA. Its transition frequency is specified at 260MHz, with a maximum power dissipation of 150mW. The internal base resistors are R1 = 2.2 kOhms and R2 = 10 kOhms. The transistor type is PNP - Pre-Biased, and it is supplied in the VMT3 package, also known as SOT-723, on tape and reel. The DC current gain (hFE) is a minimum of 140 at 100mA collector current and 2V VCE. This device is utilized in various electronic circuits across industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Supplier Device Package | VMT3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 150 mW |
| Frequency - Transition | 260 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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