DTB713ZMT2L
TRANS PREBIAS PNP 30V 0.2A VMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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The Rohm Semiconductor DTB713ZMT2L is a PNP pre-biased bipolar junction transistor designed for efficient switching and amplification applications. This component features a collector-emitter breakdown voltage of 30V and a maximum collector current of 200mA. With a transition frequency of 260MHz and a maximum power dissipation of 150mW, it is suitable for use in portable electronics, automotive systems, and general-purpose analog circuits. The integrated base resistors, R1 at 1kO and R2 at 10kO, simplify circuit design by providing built-in bias. The DTB713ZMT2L is housed in a compact SOT-723 (VMT3) package, facilitating high-density surface mount assembly. It offers a minimum DC current gain (hFE) of 140 at 100mA collector current and 2V collector-emitter voltage, with a saturation voltage of 300mV at 50mA collector current. The device exhibits a low collector cutoff current of 500nA. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Supplier Device Package | VMT3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 150 mW |
| Frequency - Transition | 260 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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