DTB123ESTP
TRANS PREBIAS PNP 50V 0.5A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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The Rohm Semiconductor DTB123ESTP is a PNP pre-biased bipolar transistor designed for high-volume applications. This through-hole component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. With a transition frequency of 200MHz and a maximum power dissipation of 300mW, it is suitable for general-purpose switching and amplification circuits. The integrated base resistors, R1 and R2, are both rated at 2.2 kOhms, simplifying circuit design. The device exhibits a minimum DC current gain (hFE) of 39 at 50mA and 5V, with a collector cutoff current of 500nA. The saturation voltage (Vce Sat) is a maximum of 300mV at 2.5mA base current and 50mA collector current. This component is supplied in an SPT package and packaged for distribution in Tape & Box (TB). Applications include consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 39 @ 50mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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