DTB122JKT146
TRANS PREBIAS PNP 50V 0.5A SMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor's DTB122JKT146 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA. It operates with a transition frequency of 200 MHz and has a maximum power dissipation of 200 mW. The internal base resistors are specified as 220 Ohms (R1) and 4.7 kOhms (R2), simplifying circuit design. The transistor type is PNP - Pre-Biased, and it is supplied in the SMT3 package, commonly known as TO-236-3, SC-59, or SOT-23-3, on a tape and reel. This device is suitable for use in various industrial and consumer electronics applications requiring compact, integrated switching and amplification functions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 47 @ 50mA, 5V |
| Supplier Device Package | SMT3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 220 Ohms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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