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DTB114TKT146

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DTB114TKT146

TRANS PREBIAS PNP 40V 0.5A SMT3

Manufacturer: Rohm Semiconductor

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor DTB114TKT146 is a PNP pre-biased bipolar transistor designed for surface-mount applications. This component operates with a collector-emitter breakdown voltage of 40V and a maximum collector current of 500mA. It features an integrated base resistor (R1) of 10 kOhms, simplifying circuit design and reducing component count. The transistor offers a minimum DC current gain (hFE) of 100 at 50mA and 5V, with a transition frequency of 200 MHz. With a maximum power dissipation of 200mW, it is suitable for use in consumer electronics, industrial automation, and communication systems. The DTB114TKT146 is supplied in a Tape & Reel (TR) package, conforming to the SMT3 standard (TO-236-3, SC-59, SOT-23-3). Collector cutoff current (ICBO) is specified at a maximum of 500nA. Saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 5V
Supplier Device PackageSMT3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max200 mW
Frequency - Transition200 MHz
Resistor - Base (R1)10 kOhms

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