DTB113ZSTP
TRANS PREBIAS PNP 50V 0.5A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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The Rohm Semiconductor DTB113ZSTP is a PNP pre-biased bipolar junction transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It offers a minimum DC current gain (hFE) of 56 at 50mA collector current and 5V collector-emitter voltage. The transition frequency for this device is 200MHz, with a maximum power dissipation of 300mW. Integrated base resistors include R1 at 1 kOhms and R2 at 10 kOhms, providing a pre-biased configuration. The transistor type is PNP, and it operates with a saturation voltage (Vce Sat) of 300mV at 2.5mA base current and 50mA collector current. The supplier device package is SPT, and it is supplied in Tape & Box (TB) packaging. Applications for this type of transistor include general switching and amplification circuits in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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