DTA144EBT2L
TRANS PREBIAS PNP 50V 0.1A VMN3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTA144EBT2L is a PNP pre-biased bipolar junction transistor designed for general switching and amplification applications. This device features a collector-emitter voltage (Vce) breakdown of 50 V and a continuous collector current (Ic) capability of 100 mA. The integrated base resistors, R1 and R2, are both specified at 47 kOhms, simplifying circuit design. With a transition frequency (fT) of 250 MHz and a maximum power dissipation of 150 mW, the DTA144EBT2L is suitable for use in consumer electronics and industrial control systems. The transistor type is PNP - Pre-Biased, and it is housed in a VMN3 (SOT-923F) surface mount package, supplied on tape and reel (TR). The saturation voltage (Vce Sat) is a maximum of 300 mV at 500 µA base current and 10 mA collector current, and the DC current gain (hFE) is a minimum of 68 at 5 mA collector current and 5 V collector-emitter voltage. Collector cutoff current (Icbo) is a maximum of 500 nA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-923F |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | VMN3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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