DTA143EEBHZGTL
TRANS PREBIAS PNP 0.1A EMT3FManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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The Rohm Semiconductor DTA143EEBHZGTL is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features integrated base resistors, simplifying circuit design and reducing component count. It offers a maximum collector current (Ic) of 100 mA and a transition frequency (fT) of 250 MHz. With a maximum power dissipation of 150 mW, it is suitable for applications requiring compact and efficient switching or amplification. The device's AEC-Q101 qualification indicates its suitability for the automotive industry. The DTA143EEBHZGTL is supplied in an EMT3F (SOT-416FL) package, delivered on tape and reel. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 10 mA and 5V, and a Vce saturation of 300mV at 500µA and 10mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | EMT3F (SOT-416FL) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Qualification | AEC-Q101 |
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