DTA125TKAT146
TRANS PREBIAS PNP 50V 0.1A SMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Rohm Semiconductor DTA125TKAT146 is a PNP Pre-Biased Bipolar Transistor (BJT) from the DTA125T series. This SMT3 package device offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It features a transition frequency of 250 MHz and a maximum power dissipation of 200mW. The integrated base resistor (R1) is 200 kOhms, with a minimum DC current gain (hFE) of 100 at 1mA and 5V. Collector cutoff current is specified at 500nA (ICBO). Saturation voltage (Vce Sat) is a maximum of 300mV at 50µA base current and 500µA collector current. This component is commonly found in industrial automation, consumer electronics, and telecommunications applications. The device is supplied in Tape & Reel packaging.
Additional Information
Series: DTA125TRoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50µA, 500µA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SMT3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 200 kOhms |
Request a Quote
Clients Also Buy
DTC115EUBTL
TRANS PREBIAS NPN 50V UMT3F
DTA144WUAT106
TRANS PREBIAS PNP 50V UMT3
DTC123YE3HZGTL
TRANS PREBIAS NPN 50V 0.1A EMT3
