DTA124ESATP
TRANS PREBIAS PNP 50V 0.03A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTA124ESATP is a PNP pre-biased bipolar junction transistor (BJT) designed for efficient signal switching and amplification. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 30 mA. The frequency of transition is 250 MHz, and it offers a minimum DC current gain (hFE) of 56 at 5 mA and 5 V. The device has a maximum power dissipation of 300 mW. Integrated base resistors, R1 and R2, are both specified at 22 kOhms, facilitating simplified circuit design. The DTA124ESATP is supplied in an SPT package, suitable for through-hole mounting, and is available in Tape & Box (TB) packaging. This transistor is commonly utilized in industrial automation, consumer electronics, and communication systems where precise signal control is required.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 30 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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