DTA123JKAT246
TRANS PREBIAS PNP 50V SOT346Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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The Rohm Semiconductor DTA123JKAT246 is a PNP pre-biased bipolar transistor designed for surface mount applications. This component, housed in a SOT-346 package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features an internal bias network with a base resistor (R1) of 2.2 kOhms and an emitter base resistor (R2) of 47 kOhms, simplifying circuit design by eliminating the need for external biasing resistors. The transistor exhibits a minimum DC current gain (hFE) of 80 at 10mA collector current and 5V Vce, with a transition frequency reaching 250 MHz. Maximum power dissipation is rated at 200 mW. This device is commonly employed in digital logic circuits, switching applications, and driver circuits across various electronic industries. The DTA123JKAT246 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-346 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Supplier Device Package | SOT-346 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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