DTA123JEBHZGTL
TRANS PREBIAS PNP 0.1A EMT3FManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
The Rohm Semiconductor DTA123JEBHZGTL is a PNP Pre-Biased Bipolar Junction Transistor (BJT) designed for surface mount applications. This component features built-in resistors, specifically R1 at 2.2 kOhms and R2 at 47 kOhms, simplifying circuit design. It offers a maximum collector current (Ic) of 100 mA and a transition frequency (fT) of 250 MHz. The transistor type is PNP, pre-biased, with a maximum power dissipation of 150 mW. The Vce(sat) is rated at 300mV @ 250µA, 5mA, and it exhibits a minimum DC current gain (hFE) of 80 at 10mA, 5V. This component adheres to AEC-Q101 qualification, making it suitable for automotive applications. It is supplied in an EMT3F (SOT-416FL) package, also recognized as SC-89 or SOT-490, on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Supplier Device Package | EMT3F (SOT-416FL) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | AEC-Q101 |
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