DTA115TETL
TRANS PREBIAS PNP 50V 0.1A EMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTA115TETL is a PNP pre-biased bipolar transistor designed for surface mount applications. This component, housed in an EMT3 package (SC-75, SOT-416), features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It offers a transition frequency of 250 MHz and a maximum power dissipation of 150 mW. The internal base resistor (R1) is specified at 100 kOhms, contributing to a typical DC current gain (hFE) of 100 at 1mA collector current and 5V Vce. The saturation voltage (Vce Sat) is a maximum of 300mV at 100µA base current and 1mA collector current. This device is commonly employed in digital logic circuits and general-purpose amplification within industrial and consumer electronics. The DTA115TETL is supplied in a tape and reel package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | EMT3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 100 kOhms |
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