DTA115GKAT146
TRANS PREBIAS PNP 50V 0.1A SMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTA115GKAT146 is a PNP pre-biased bipolar junction transistor offering a 50V collector-emitter breakdown voltage and a 100mA maximum collector current. This device features an integrated 100 kOhm emitter-base resistor, simplifying circuit design. It operates with a transition frequency of 250 MHz and a maximum power dissipation of 200 mW. The SMT3 package, equivalent to TO-236-3 or SOT-23-3, facilitates surface mount assembly. Typical applications include digital logic circuits and switching functions in automotive and industrial electronics. The DTA115GKAT146 exhibits a saturation voltage of 300mV at 250µA base and 5mA collector current, with a minimum DC current gain (hFE) of 82 at 5mA collector current and 5V collector-emitter voltage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V |
| Supplier Device Package | SMT3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 100 kOhms |
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