DTA114WETL
TRANS PREBIAS PNP 50V 0.1A EMT3Manufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Rohm Semiconductor DTA114WETL is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 150mW, it is suitable for signal switching and amplification in various electronic systems. The integrated bias resistors, R1 (10 kOhms) and R2 (4.7 kOhms), simplify circuit design and reduce component count. The DTA114WETL is supplied in an EMT3 (SC-75, SOT-416) package on tape and reel. Its low saturation voltage of 300mV at 500µA base current and 10mA collector current, coupled with a minimum DC current gain of 24 at 10mA and 5V, makes it efficient for digital logic interfaces and general-purpose switching applications within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 24 @ 10mA, 5V |
| Supplier Device Package | EMT3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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