DTA114ESATP
TRANS PREBIAS PNP 50V 0.05A SPTManufacturer: Rohm Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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The Rohm Semiconductor DTA114ESATP is a PNP pre-biased bipolar transistor with a collector-emitter breakdown voltage of 50 V. It features internal base resistors of 10 kOhms for both R1 and R2, simplifying circuit design. This device offers a maximum collector current (Ic) of 50 mA and a transition frequency of 250 MHz, with a maximum power dissipation of 300 mW. The minimum DC current gain (hFE) is 30 at 5 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce Sat) is rated at 300 mV maximum for 500 µA base current and 10 mA collector current. The DTA114ESATP is supplied in a SPT package, suitable for through-hole mounting, and is available in Tape & Box (TB) packaging. This component is commonly utilized in industrial automation, consumer electronics, and telecommunications applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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