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DTA114ESATP

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DTA114ESATP

TRANS PREBIAS PNP 50V 0.05A SPT

Manufacturer: Rohm Semiconductor

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

The Rohm Semiconductor DTA114ESATP is a PNP pre-biased bipolar transistor with a collector-emitter breakdown voltage of 50 V. It features internal base resistors of 10 kOhms for both R1 and R2, simplifying circuit design. This device offers a maximum collector current (Ic) of 50 mA and a transition frequency of 250 MHz, with a maximum power dissipation of 300 mW. The minimum DC current gain (hFE) is 30 at 5 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce Sat) is rated at 300 mV maximum for 500 µA base current and 10 mA collector current. The DTA114ESATP is supplied in a SPT package, suitable for through-hole mounting, and is available in Tape & Box (TB) packaging. This component is commonly utilized in industrial automation, consumer electronics, and telecommunications applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseSC-72 Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Supplier Device PackageSPT
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max300 mW
Frequency - Transition250 MHz
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms

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