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DTA114EBT2L

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DTA114EBT2L

TRANS PREBIAS PNP 50V 0.1A VMN3

Manufacturer: Rohm Semiconductor

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

The Rohm Semiconductor DTA114EBT2L is a PNP pre-biased bipolar transistor designed for surface mounting in a VMN3 (SOT-923F) package. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a transition frequency of 250 MHz and a maximum power dissipation of 150 mW, the DTA114EBT2L includes integrated base resistors of 10 kOhms (R1) and 10 kOhms (R2). The DC current gain (hFE) is a minimum of 30 at 5 mA and 5 V, with a saturation voltage (Vce Sat) of 300 mV at 500 µA and 10 mA. It is supplied on tape and reel. This component is suitable for applications in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-923F
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Supplier Device PackageVMN3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW
Frequency - Transition250 MHz
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms

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