RGWX5TS65DGC11
IGBT TRENCH FLD 650V 132A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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The Rohm Semiconductor RGWX5TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component offers a 650 V collector-emitter breakdown voltage and a continuous collector current capability of 132 A, with a pulsed current capability of 300 A. It features a maximum power dissipation of 348 W and a low on-state voltage of 1.9 V at 15 V gate-emitter voltage and 75 A collector current. Key switching characteristics include a gate charge of 213 nC, turn-on delay of 64 ns, and turn-off delay of 229 ns at 25°C, with a reverse recovery time of 101 ns. The RGWX5TS65DGC11 is housed in a TO-247N package, suitable for through-hole mounting, and operates within an ambient temperature range of -40°C to 175°C. This device finds application in power conversion systems, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 101 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 75A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 64ns/229ns |
| Switching Energy | 2.39mJ (on), 1.68mJ (off) |
| Test Condition | 400V, 75A, 10Ohm, 15V |
| Gate Charge | 213 nC |
| Current - Collector (Ic) (Max) | 132 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 348 W |
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