RGW80TS65GC11
IGBT TRNCH FIELD 650V 78A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGW80TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This device features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 78 A, with a pulsed current capability of 160 A. The RGW80TS65GC11 offers a maximum power dissipation of 214 W and a low on-state voltage (Vce(on)) of 1.9 V at 15 V gate-source voltage and 40 A collector current. Switching characteristics include an on-time of 44 ns and an off-time of 143 ns at 25°C under test conditions of 400 V, 40 A, 10 Ohm, and 15 V. The gate charge is rated at 110 nC. Packaged in a TO-247N via through-hole mounting, this component operates across a temperature range of -40°C to 175°C. This IGBT is suitable for use in industrial power supplies, motor drives, and uninterruptible power supplies (UPS).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 40A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 44ns/143ns |
| Switching Energy | 760µJ (on), 720µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 110 nC |
| Current - Collector (Ic) (Max) | 78 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 214 W |
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