RGW80TS65DGC11
IGBT TRNCH FIELD 650V 78A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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The Rohm Semiconductor RGW80TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a collector-emitter breakdown voltage of 650 V and a continuous collector current capability of 78 A, with a pulsed collector current of 160 A. The IGBT type is Trench Field Stop, offering efficient switching performance. It has a maximum power dissipation of 214 W and an on-state voltage (Vce(on)) of 1.9 V at 15 V gate drive and 40 A collector current. Switching characteristics include a gate charge of 110 nC, turn-on delay (Td(on)) of 44 ns, and turn-off delay (Td(off)) of 143 ns, both specified at 25°C with a 400 V, 40 A, 10 Ohm load and 15 V gate drive. Reverse recovery time (trr) is 92 ns. The device is housed in a TO-247N package for through-hole mounting and operates within an ambient temperature range of -40°C to 175°C. This component is commonly utilized in power conversion systems, industrial motor drives, and renewable energy applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 92 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 40A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 44ns/143ns |
| Switching Energy | 760µJ (on), 720µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 110 nC |
| Current - Collector (Ic) (Max) | 78 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 214 W |
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