RGW60TS65GC11
IGBT TRNCH FIELD 650V 60A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
Quality Control: Learn More
The Rohm Semiconductor RGW60TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 650 V collector-emitter breakdown voltage and a maximum continuous collector current of 60 A, with a pulsed capability of 120 A. It offers a low on-state voltage (Vce(on)) of 1.9 V at 15 V gate-emitter voltage and 30 A collector current, with typical switching times of 37 ns turn-on and 114 ns turn-off under specified test conditions. The IGBT handles a maximum power dissipation of 178 W and operates within an extended temperature range of -40°C to 175°C. Packaged in a TO-247N (TO-247-3) through-hole configuration, this component is suitable for use in power factor correction, motor control, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 37ns/114ns |
| Switching Energy | 480µJ (on), 490µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 84 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 178 W |
Request a Quote
Clients Also Buy
RGS00TS65DHRC11
IGBT TRNCH FIELD 650V 88A TO247N
RGW40TS65DGC11
IGBT TRNCH FIELD 650V 40A TO247N
RGW50TK65GVC11
IGBT TRNCH FIELD 650V 30A TO3PFM
