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RGW60TS65DGC11

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RGW60TS65DGC11

IGBT TRNCH FIELD 650V 60A TO247N

Manufacturer: Rohm Semiconductor

Categories: Single IGBTs

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The Rohm Semiconductor RGW60TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component features a 650V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed current capability of 120A. The RGW60TS65DGC11 offers a maximum power dissipation of 178W and a low on-state voltage of 1.9V at 15V gate-emitter voltage and 30A collector current. Switching characteristics include typical turn-on delay of 37ns and turn-off delay of 114ns at 25°C, with associated switching energies of 480µJ (on) and 490µJ (off) under specified test conditions. The device operates within an extended temperature range of -40°C to 175°C (TJ) and is presented in a TO-247N package suitable for through-hole mounting. This IGBT is commonly utilized in power factor correction circuits, industrial power supplies, and motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)92 ns
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 30A
Supplier Device PackageTO-247N
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C37ns/114ns
Switching Energy480µJ (on), 490µJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge84 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)120 A
Power - Max178 W

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