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RGW50TS65GC11

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RGW50TS65GC11

IGBT TRNCH FIELD 650V 50A TO247N

Manufacturer: Rohm Semiconductor

Categories: Single IGBTs

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The Rohm Semiconductor RGW50TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 50 A, with a pulsed capability of 100 A. The device offers a low on-state voltage (Vce(on)) of 1.9V at 15V gate-emitter voltage and 25A collector current, and a maximum power dissipation of 156 W. With a gate charge of 73 nC, it is suitable for demanding switching applications. The RGW50TS65GC11 supports a wide operating temperature range from -40°C to 175°C. Switching energy is specified at 390µJ (on) and 430µJ (off) under test conditions of 400V, 25A, 10 Ohm, and 15V. The IGBT is supplied in a TO-247N package for through-hole mounting. This component finds application in power conversion systems, including industrial motor drives and power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 25A
Supplier Device PackageTO-247N
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C35ns/102ns
Switching Energy390µJ (on), 430µJ (off)
Test Condition400V, 25A, 10Ohm, 15V
Gate Charge73 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)100 A
Power - Max156 W

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