RGW50TS65DGC11
IGBT TRNCH FIELD 650V 50A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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The Rohm Semiconductor RGW50TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component offers a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 50 A, with a pulsed capability of 100 A. It features a low on-state voltage (Vce(on)) of 1.9 V at 15 V gate drive and 25 A collector current, contributing to reduced conduction losses. The device exhibits switching characteristics with typical turn-on delay (Td(on)) of 35 ns and turn-off delay (Td(off)) of 102 ns at 400 V, 25 A, and 15 V gate drive. With a maximum power dissipation of 156 W and a high junction temperature rating of 175°C, it is suitable for operation in harsh environments. The RGW50TS65DGC11 is packaged in a TO-247N (TO-247-3) through-hole mount. This IGBT is commonly utilized in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 25A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 35ns/102ns |
| Switching Energy | 390µJ (on), 430µJ (off) |
| Test Condition | 400V, 25A, 10Ohm, 15V |
| Gate Charge | 73 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 156 W |
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