RGW40TS65GC11
IGBT TRNCH FIELD 650V 40A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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The Rohm Semiconductor RGW40TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a robust 650V collector-emitter breakdown voltage and a continuous collector current rating of 40A, with a pulsed capability of 80A. The device exhibits a low on-state voltage of 1.9V at 15V gate-emitter voltage and 20A collector current, with a maximum power dissipation of 136W. Key switching characteristics include a gate charge of 59 nC and switching energies of 330µJ (on) and 300µJ (off) under specified test conditions. The RGW40TS65GC11 is housed in a TO-247N package for through-hole mounting and operates across an extended temperature range of -40°C to 175°C. This IGBT is suitable for power conversion systems in industrial, automotive, and renewable energy sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 20A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 33ns/76ns |
| Switching Energy | 330µJ (on), 300µJ (off) |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Gate Charge | 59 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 136 W |
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